Thermo-compensated silicon photo-multiplier with on-chip temperature sensor
US9954124B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | May 19, 2017 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | May 19, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/448
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A silicon photomultiplier (SiPM) device is provided with a SiPM matrix and a temperature compensation circuit fabricated on a substrate. The temperature compensation circuit can include a temperature sensor, a bias adjustment circuit and a current source. The current source can provide a current to the temperature sensor and the temperature sensor can provide a temperature dependent signal to the bias adjustment circuit. The bias adjustment circuit can adjust a bias voltage provided to the SiPM matrix in response to the signal from the temperature sensor in order to maintain a predefined overvoltage value at the SiPM matrix.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.