Systems and methods for detectors having improved internal electrical fields
US9954132B2 · kind B2 · utility
1Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2014 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Jan 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/206
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A radiation detector is provided including a cathode, an anode, and a semiconductor wafer. The semiconductor wafer has opposed first and second surfaces. The cathode is mounted to the first surface, and the anode is mounted to the second surface. The semiconductor wafer is configured to be biased by a voltage between the cathode and the anode to generate an electrical field in the semiconductor wafer and to generate electrical signals responsive to absorbed radiation. The electrical field has an intensity having at least one local maximum disposed proximate to a corresponding at least one of the first surface or second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.