Hybrid switch including GaN HEMT and MOSFET
US9954522B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2017 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Jun 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A hybrid switch apparatus includes a gate drive circuit producing a gate drive signal, a GaN high electron mobility transistor (HEMT) having a first gate, a first drain, and a first source. A silicon (Si) MOSFET has a second gate, a second drain, and a second source. The GaN HEMT and the Si MOSFET are connected in a parallel arrangement so that (i) the first drain and the second drain are electrically connected and (ii) the first source and the second source are electrically connected. The second gate is connected to the gate drive circuit output to receive the gate drive signal. A delay block has an input connected to the gate drive circuit output and an delay block output is configured to produce a delayed gate drive signal for driving the GaN HEMT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.