High dynamic range image sensor with virtual high-low sensitivity pixels
US9955090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2016 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Jul 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.