High dynamic range image sensor read out architecture using in-frame multi-bit exposure control
US9955091B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2016 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Dec 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/812
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel circuit includes a photodiode to accumulate image charge in response to incident light. A transfer transistor is disposed between the photodiode and a floating diffusion disposed in the first semiconductor layer to selectively transfer the image charge accumulated in the photodiode to the floating diffusion. A select circuit is disposed in second semiconductor layer coupled to a control terminal of the transfer transistor through a hybrid bond between the first and second semiconductor layers to select between first and second transfer control signals to control the transfer transistor. The select circuit is coupled to output the first transfer control signal in response to a precharge enable signal during a read out operation of a different row, and output the second transfer control signal in response to a sample enable signal during a read out operation of the row.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.