Image sensor with non-local readout circuit and optoelectronic device comprising said image sensor
US9955100B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2016 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Aug 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/32
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided are image sensors with non-local readout circuits that include a substrate and a plurality of pixels and operatively connected to a control unit, wherein the control unit has first and second biasing circuits for providing, respectively, substantially symmetrical first and second biasing voltages and including, respectively, first and second selection means to selectively bias the pixels; and a readout circuit for reading out the pixels; and in that each pixel includes a photo-active element that has a photosensitizing layer associated to a transport layer; a non-photo-active reference element; first and second contacts circuitally connected, respectively, to the first and second biasing circuits; and an output contact circuitally connected to the readout circuit; wherein the photo-active element is circuitally connected between the first and output contacts, and the reference element is circuitally connected between the output and second contacts. Also provided are optoelectronic systems that include the image sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.