Method for preparing high-performance tantalum target
US9957603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2013 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Oct 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3323
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for preparing a high-performance tantalum target, a high-performance target prepared by the method, and a use of the high-performance target. The method for preparing the high-performance tantalum target comprises: firstly, preparing a tantalum ingot into a forging blank by a method of cold forging in conjunction with hot forging; then, rolling the forging blank by a hot rolling method; and finally, performing leveling, and performing discharging, milling and surface treatment according to a size of a finished product, so as to obtain the tantalum target. The tantalum target prepared by the method has uniform crystallization, with a grain size between 50 μm and 120 μm. A texture component where a texture (110) dominants in the thickness direction of the target is obtained. A total proportion of three textures (111), (110) and (100) is between 40% and 50%, ensuring a consistent sputtering rate of the tantalum target during use.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.