Signal enhancement mechanism for dual-gate ion sensitive field effect transistor in on-chip disease diagnostic platform
US9958443B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2017 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Apr 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/761
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Dual-gate ion-sensitive field effect transistors (ISFETs) for disease diagnostics are disclosed herein. An exemplary dual-gate ISFET includes a gate structure and a fluidic gate structure disposed over opposite surfaces of a device substrate. The gate structure is disposed over a channel region defined between a source region and a drain region in the device substrate. The fluidic gate structure includes a sensing well that is disposed over the channel region. The sensing well includes a sensing layer and an electrolyte solution. The electrolyte solution includes a constituent that can react with a product of an enzymatic reaction that occurs when an enzyme-modified detection mechanism detects an analyte. The sensing layer can react with a first ion generated from the enzymatic reaction and a second ion generated from a reaction between the product of the enzymatic reaction and the constituent, such that the dual-gate ISFET generates an enhanced electrical signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.