Pellicle for EUV lithography
US9958770B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2015 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Jun 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/027
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pellicle for EUV lithography is provided. The pellicle for EUV lithography may improve strength of a pellicle film by having a strength reinforcing layer including a first coupling layer and a carbon nanostructure disposed on a first inorganic layer, the first coupling layer here increase coupling strength between the first inorganic layer and the strength reinforcing layer, and a strength reinforcing layer including a carbon nanostructure. Also, a pellicle for EUV lithography according to another embodiment and a method of fabricating the same are provided. The pellicle for EUV lithography includes a plurality of holes and is a porous thin film made of a material with an extinction coefficient less than or equal to 0.02, and a diameter of the holes is less than or equal to 1 μm. Accordingly, improved strength is achievable because thickness may be made large with still having high EUV transmission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.