Apparatus and methods for memory using in-plane polarization
US9959920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2017 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Mar 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.