Laser assisted SiC growth on silicon
US9960037B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
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Inventors
Key dates
| Filing date | Aug 3, 2016 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Aug 3, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a compound on a substrate is provided. The method includes depositing a composition onto a surface of a substrate; illuminating the composition and the substrate with pulsed energy; melting the substrate and decomposing the composition simultaneously; and forming a compound on the substrate. A first component of the compound is derived from the substrate and a second component of the compound is derived from the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.