Patent · US Active

Metal bond pad with cobalt interconnect layer and solder thereon

US9960135B2 · kind B2 · utility

3Cited by

3References

17Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Helmut Rinck · Moosburg an der Isar, DE
Gernot Manfred Bauer · Moosburg an der Isar, DE
ROBERT ZRILE · Munich, DE
Kai-Alexander Schachtschneider · Rohrbach, DE
Michael Otte · Moosburg an der Isar, DE
HARALD WIESNER · Landshut, DE

Key dates

Filing date	Mar 23, 2015
Grant date	May 1, 2018
Priority date	—
Expiry date	Mar 23, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/2064
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming bond pads includes providing a substrate including an integrated circuit (IC) device formed thereon having an oxidizable uppermost metal interconnect layer which provides a plurality of bond pads that are coupled to circuit nodes on the IC device. The plurality of bond pads includes a metal bond pad area. A cobalt including connection layer is deposited directly on the metal bond pad area. The cobalt including connection layer is patterned to provide a cobalt bond pad surface for the plurality of bond pads, and a solder material is formed on the cobalt bond pad surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.