Field effect transistor memory device
US9960175B2 · kind B2 · utility
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2References
16Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 6, 2015 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Mar 6, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for generating a non-volatile memory device may comprise: applying plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel. The channel is comprised of a multi-layer structure of atomically thin two-dimensional sheets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.