Thin film transistor, array substrate, and fabrication method there of, and display apparatus

US9960188B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventor

• Li Zhang · Inagi, JP

Key dates

• Filing date: Dec 10, 2015
• Grant date: May 1, 2018
• Expiry date: Jan 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

A thin film transistor comprises a source over a substrate; a first insulation layer having a source contact through-hole corresponding to a position of the source over the source; an active layer electrically connecting with the source through the source contact through-hole over the etching stop layer; a second insulation layer having a drain contact through-hole exposing a portion of the active layer over the active layer; and a drain electrically connecting with the active layer through the drain contact through-hole over the second insulation layer.