Semiconductor device and method of manufacturing the same
US9960269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2017 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Feb 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to one embodiment includes a semiconductor substrate having a main surface and a back surface opposite to the main surface, a drift region of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, and a gate electrode. The semiconductor substrate has a trench in the main surface. The gate electrode is formed in the trench. A distribution of an impurity concentration in the base region has a plurality of peak values along a direction of depth from the main surface toward the back surface, and the number of peak values is four or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.