Avalanche photodiode using silicon nanowire and silicon nanowire photomultiplier using the same
US9960299B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2016 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Jul 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/206
Abstract
Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.