Patent · US Active

Inorganic salt-nanoparticle ink for thin film photovoltaic devices and related methods

US9960314B2 · kind B2 · utility

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4References
13Claims
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Key dates

Filing dateSep 8, 2014
Grant dateMay 1, 2018
Priority date
Expiry dateSep 8, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/541
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

Compositions for solution-based deposition of CIGS films are described. The compositions include ternary, quaternary or quinary chalcogenide nanoparticles (i.e., CIGS nanoparticles) and one or more inorganic salts dissolved or dispersed in a solvent to form an ink. The ink can be deposited on a substrate by conventional coating techniques and then annealed to form a crystalline layer. Further processing can be employed to fabricate a PV device. The inorganic salts are included to (i) tune the stoichiometry of the CIGS precursor ink to a desirable ratio, thus tuning the semiconductor band gap, to (ii) dope the CIGS layer with additives, such as Sb and/or Na, to promote grain growth, and/or to (iii) modify and improve the coating properties of the CIGS precursor ink.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.