Method for producing a thin film made of lead zirconate titanate
US9960344B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2012 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Aug 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/076
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.3, and the deposition rate of lead is selected to be sufficiently low, depending on the substrate temperature and the total deposition rate of lead, zirconium, and titanium, for an X-ray diffractometer graph of the 111-oriented lead zirconate titanate to have a significant peak value (19) in a diffraction angle range from 33 to 35.5°; and completing the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.