Method of doping an organic semiconductor and doping composition
US9960352B2 · kind B2 · utility
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Key dates
| Filing date | Jul 26, 2016 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Jul 26, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor, and wherein an absorption maximum wavelength of the n-dopant precursor is shorter than any peak wavelength of the light. The n-doped semiconductor layer may be an electron-injection layer of an organic light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.