Thin film transistor gate voltage supply circuit
US9960761B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 6, 2016 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Jul 7, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2320/041
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a thin film transistor gate voltage supply circuit, and the thin film transistor gate voltage supply circuit is employed to supply a gate voltage for a thin film transistor, and the thin film transistor gate voltage supply circuit comprises a voltage generation circuit and a temperature compensation circuit, and the voltage generation circuit is employed to generate an original voltage, and the temperature compensation circuit is electrically coupled to the voltage generation circuit, and the temperature compensation circuit is employed to detect an ambient temperature, and as the ambient temperature is smaller than a preset temperature, the temperature compensation circuit compensates the original voltage according to a difference value of the ambient temperature and the preset temperature to obtain a first voltage, and supplies the first voltage to a gate of the thin film transistor to drive the thin film transistor normally work.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.