Insulated gate bipolar transistor driving circuit
US9960766B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 22, 2015 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Dec 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/163
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides an IGBT driving circuit, including an optocoupler chip and a power amplification circuit. The optocoupler chip includes an isolation amplification unit and a fault protection unit, and the fault protection unit includes a desaturation module and a fault feedback module. The desaturation module is configured to transmit a warning signal to the fault feedback module when detecting that a potential of a collector of the IGBT is overhigh or the potential of the collector of the IGBT changes overfast. The fault feedback module is configured to transmit a fault control signal to the external controller after receiving the warning signal so as to control the external driving signal outputted by the external controller and enable the isolation amplification unit to output an IGBT driving signal for controlling a shutdown of the IGBT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.