Patent · US Active

Process for manufacturing colloidal materials, colloidal materials and their uses

US9963633B2 · kind B2 · utility

2Cited by
0References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 19, 2014
Grant dateMay 8, 2018
Priority date
Expiry dateApr 21, 2035

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC09K11/883
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A colloidal material including semiconductor nanocrystals of formula AnXm, wherein A is selected from group Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb, VIb, VIIb, VIII, IIb, III, IV or mixtures thereof, X is selected from group Va, VIa, VIIa or mixtures thereof, and n and m are independently a decimal number from 0 to 5. The semiconductor nanocrystals have a quasi 2D structure, wherein the smallest dimension is smaller than the other two dimensions by a factor of at least 1.5 and the faces substantially normal to the smallest dimension consist either of A or X. Also, a semiconducting thin film, an optoelectronic device, a laser, a photovoltaic cell, a diode, a light emitting diode or a display including the colloidal material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.