Doping method for array substrate and manufacturing equipment of the same
US9964854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2017 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Mar 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device for manufacturing an array substrate includes an exposure device for using a halftone mask to form a photoresist pattern layer on a gate insulation layer of a substrate. A polysilicon pattern layer is disposed on the substrate. A gate insulation layer covers the polysilicon pattern layer. The photoresist pattern layer includes a hollow portion corresponding to a heavily doping region of the polysilicon pattern layer, a first photoresist portion corresponding to a lightly doping region of the polysilicon pattern layer, and a second photoresist portion corresponding to an undoped region of the polysilicon pattern layer. The first photoresist portion is thinner than the second photoresist portion. A doping device is used for performing one doping process to the polysilicon pattern layer such that the heavily doping region and the lightly doping region are formed simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.