Method and apparatus for detecting crystal orientation of silicon wafer
US9965846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2014 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | May 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for detecting crystal orientation of a silicon wafer is proposed. The detection method uses a camera shooting device to irradiate the silicon wafer in a rotation manner in different angular directions and obtains the corresponding reflection intensities, based on which a reflection curve is drawn for a grain of interest in a polar coordinate system; normal directions of three or more faces of a regular octahedron of a grain <111> are determined by identifying a pixel brightness extreme value in the reflection curve, and then all normal vectors of the regular octahedron are calculated, so that a crystal orientation of the grain of interest may be calculated. The camera shooting device has a light source and one or more camera shooting probes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.