Metal-insulator-metal (MIM) capacitor with an electrode scheme for improved manufacturability and reliability
US9966427B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2016 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | May 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a metal-insulator-metal (MIM) capacitor with a top electrode that is free of sidewall damage is provided. A bottom electrode layer is formed with a first material. An inter-electrode dielectric layer is formed over the bottom electrode layer. A top electrode layer is formed over the inter-electrode dielectric layer and without the first material. A first etch is performed into the top electrode layer and the inter-electrode dielectric layer to form a top electrode. A second etch into the bottom electrode layer to form a bottom electrode. The present application is also directed towards a MIM capacitor resulting from performing the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.