PIN photodiode, X-ray detecting pixel, X-ray detecting apparatus and detecting method thereof
US9966492B1 · kind B1 · utility
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2References
16Claims
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Key dates
| Filing date | Jun 22, 2016 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Jun 22, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
The present application provides a PIN photodiode, an X-ray detecting pixel, an X-ray detecting apparatus and a detecting method thereof. The PIN photodiode may comprise a first doped layer, an intrinsic layer disposed over the first doped layer, and a second doped layer disposed over the intrinsic layer. The photodiode further comprises a third doped layer disposed over the second doped layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.