PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film
US9966527B2 · kind B2 · utility
0Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2016 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Jul 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/853
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.