Power conversion device and drive device
US9966870B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2016 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | May 28, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/76
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
To reduce the number of mounted components in the power conversion device and drive device.Each high-side transistor and low-side transistor has an EGE-type structure of (emitter-gate-emitter type). A high-side driver includes a first pull-up transistor configured to apply a first positive voltage to a gate based on an emitter of the high-side transistor, and a first pull-down transistor configured to couple the gate to the emitter. A low-side driver includes a second pull-up transistor configured to apply a second positive voltage to the gate based on an emitter of the low-side transistor, and a second pull-down transistor configured to couple the gate to the emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.