Patent · US Active

MOS transistor saturation region detector

US9970979B2 · kind B2 · utility

1Cited by
5References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 6, 2015
Grant dateMay 15, 2018
Priority date
Expiry dateNov 12, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R1/30
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

This application relates to a circuit for determining whether a first transistor device is in a predetermined operation mode. The circuit comprises comprising: a second transistor device, wherein control terminals of the first and second transistor devices are connected, and one of input and output terminals of the first transistor device is connected to the other one of input and output terminals of the second transistor device, a buffer amplifier connected between the one of input and output terminals of the first transistor device and the other one of input and output terminals of the second transistor device, and circuitry for determining whether the first transistor device is in the predetermined operation mode based on an indication of a current flowing through the second transistor device. The application further relates to a method of determining whether a first transistor device is in a predetermined operation mode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.