Field-effect transistor, display element, image display device, and system
US9972274B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2014 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Nov 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.