Sensing circuit for resistive memory
US9972387B2 · kind B2 · utility
0Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2014 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Oct 31, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/068
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This disclosure provides a circuit that includes a ramp generator to apply a voltage ramp to a resistive memory cell. A sensing circuit can enable the ramp generator and monitor a current output received from the resistive memory cell in response to the applied voltage ramp, wherein the sensing circuit compares the current output to a predetermined current threshold to determine the state of the resistive memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.