Semiconductor devices, through-substrate via structures and methods for forming the same
US9972534B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2017 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Jun 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a through-substrate via structure, a first metal layer, an electronic component over the through-substrate via structure, a second metal layer and another electronic component below the through-substrate via structure. The through-substrate via structure includes a through hole penetrating from a first surface to an opposite second surface of a semiconductor substrate, and an acute angle is included between a sidewall of the through hole and the second surface on a side of the semiconductor substrate. The through-substrate via structure also includes a conductive layer that fills the through hole, and a semiconductor layer disposed in the through hole and interposed between the conductive layer and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.