Patent · US Active

Semiconductor device

US9972612B2 · kind B2 · utility

0Cited by
2References
6Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 16, 2016
Grant dateMay 15, 2018
Priority date
Expiry dateMay 16, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/8325
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes: a first element formed of a first constituent as a main constituent; a second element formed of a second constituent as a main constituent; a heat sink on which the first element and the second element are disposed; a first connection layer electrically connecting the first element to the heat sink; a second connection layer electrically connecting the second element to the heat sink; and a mold resin covering and protecting the first element, the second element and the heat sink. Sizes of the first element and the second element are set so that an equivalent plastic strain increment of the first connection layer is greater than the second connection layer. Accordingly, in the semiconductor device including semiconductor elements formed of different constituents, the elements are thermally protected without providing a temperature detector to the semiconductor element formed of one of the constituents.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.