Method for producing a dielectric field plate in a substrate trench, a corresponding substrate, and a power transistor

US9972690B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Achim Trautmann · Leonberg, DE
• Christian Tobias Banzhaf · Laichingen, DE

Key dates

• Filing date: Mar 9, 2015
• Grant date: May 15, 2018
• Expiry date: Mar 9, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/2527

Abstract

A substrate includes a trench with walls and a base. The substrate also includes a dielectric field plate. The dielectric field plate consists of at least one first dielectric layer, which only adjoins lower sections of the walls of the trench and the base of the trench. Parasitic capacitances can be reduced when using this substrate for power transistors.