Semiconductor device
US9972701B2 · kind B2 · utility
16Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2017 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Feb 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/687
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a fin-type active area, nanosheets, a gate, a source/drain region, and insulating spacers. The fin-type active area protrudes from a substrate in a first direction. The nanosheets are spaced from an upper surface of the fin-type active area and include channel regions. The gate is over the fin-type active area. The source/drain region is connected to the nanosheets. The insulating spacers are in the fin-type active area and between the nanosheets. Air spaces are between the insulating spacers and the source/drain region based on positions of the insulating spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.