Piezoelectric thin-film based flexible sensing device, method for fabrication thereof and method for operating the same
US9972723B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 12, 2015 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Aug 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/86
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensing device, a method for fabrication thereof, and a method for operating the same are disclosed. The sensing device includes a flexible substrate, a first metallization layer, a piezoelectric thin film layer, a second metallization layer, and an insulating layer. The first metallization layer forms at least a source region and at least a drain region. The piezoelectric thin film layer provides a channel region permitting passage of charge carriers between the source region and the drain region. The second metallization layer forms at least a gate electrode and regulates flow of charge carriers through the piezoelectric thin film layer. When subjected to an external force, the flow of charge carriers is modulated in response to a strain in the piezoelectric thin film layer. The force is measured as a correlation between the applied force and the modulation of the flow of charge carriers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.