Bispectral matrix sensor and method for manufacturing the same
US9972727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2015 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Jun 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/806
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a method for manufacturing a bispectral matrix detector comprising the following steps: providing a monotype matrix detector; depositing, on the sensitive surface (3) of the monotype matrix detector, a dual-band interference filter (5) allowing the radiation in the first and second frequency bands to pass therethrough; depositing a first interference filter (4a) vertically in line with photosites (31a) intended for sensing in the first frequency band; depositing a second interference filter (4b) vertically in line with photosites (31b) intended for sensing in the second frequency band, one of the first (4a) and second (4b) interference filters being a low-pass filter cutting the second frequency band, and the other a high-pass filter cutting the first frequency band.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.