Patent · US Active

Thin-film semiconductor body with electronmagnetic radiation outcoupling structures

US9972748B2 · kind B2 · utility

0Cited by

6References

8Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Christian Leirer · Friedberg, DE
Anton Vogl · Sinzing, DE
Andreas Biebersdorf · Regensburg, DE
Rainer Butendeich · Regensburg, DE
Christian Rumbolz · Lappersdorf, DE

Key dates

Filing date	Oct 29, 2015
Grant date	May 15, 2018
Priority date	—
Expiry date	Oct 29, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/882
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.