Patent · US Active

MEMS-based method for manufacturing sensor

US9975766B2 · kind B2 · utility

4Cited by
1References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 5, 2015
Grant dateMay 22, 2018
Priority date
Expiry dateMay 5, 2035

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2201/0142
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is more precise, and the uniformity and the homogeneity of the formed support beam are better.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.