Resist patterning method, latent resist image forming device, resist patterning device, and resist material
US9977332B2 · kind B2 · utility
1Cited by
5References
19Claims
0Family size
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Key dates
| Filing date | Feb 20, 2014 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Apr 2, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer 12 on a substrate 11; an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.