Metal nitride film for thermistor, process for producing same, and thermistor sensor of film type
US9978484B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2013 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Nov 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70≤y/(x+y)≤0.95, 0.4≤z≤0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.