Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and devices on sapphire substrates
US9978589B2 · kind B2 · utility
9Cited by
10References
29Claims
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Key dates
| Filing date | Apr 15, 2015 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Apr 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and structures for forming epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates are described. Semi-nitrogen-polar GaN may be grown from inclined c-plane facets of sapphire and coalesced to form a continuous layer of (2021) GaN over the sapphire substrate. Nitridation of the sapphire and a low-temperature GaN buffer layer is used to form semi-nitrogen-polar GaN.
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