Photo mask and exposure system
US9978595B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 16, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Apr 13, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2016
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention belongs to the field of semiconductor technology, and specifically provides a photo mask and an exposure system. The photo mask is provided with a patterning structure for forming a resulting pattern, the patterning structure comprising a strip-like main body for forming a rectilinear pattern, wherein the patterning structure further comprises a patterning structure auxiliary unit provided at two sides of the strip-like main body, the patterning structure auxiliary unit being capable of adjusting and compensating direction and intensity of light during exposure. With the photo mask, the resulting pattern formed through exposure using the photo mask has improved fineness, thereby improving accuracy of the formed rectilinear pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.