Ion sensitive field effect transistors with protection diodes and methods of their fabrication
US9978689B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2013 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Dec 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An embodiment of an Ion Sensitive Field Effect Transistor (ISFET) structure includes a substrate, source and drain regions formed within the substrate and spatially separated by a channel region, a gate dielectric and a gate formed over the channel region, multiple conductive structures overlying the surface of the substrate, and one or more protection diode circuits coupled between one or more of the multiple conductive structures and the substrate. The multiple conductive structures include a floating gate structure and a sense plate structure. The floating gate structure is formed over the gate dielectric and includes the gate. The sense plate structure is electrically coupled to the floating gate structure and is configured to sense a concentration of a target ion or molecule in a fluid adjacent to a portion of the sense plate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.