Semiconductor device and method of manufacturing the same
US9978753B2 · kind B2 · utility
8Cited by
9References
18Claims
0Family size
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Key dates
| Filing date | Jan 19, 2017 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Jan 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.