Method of obtaining planar semipolar gallium nitride surfaces
US9978845B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2015 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Apr 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and structures for forming flat, continuous, planar, epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates are described. Semipolar GaN may be grown from inclined c-plane facets on a patterned sapphire substrate, and coalesced to form a continuous layer of semipolar III-nitride semiconductor over the sapphire substrate. Planarization of the layer is followed by crystal regrowth using a nitrogen carrier gas to produce a flat, microfabrication-grade, process surface of semipolar III-nitride semiconductor across the substrate. Quality multiple quantum wells can be fabricated in the regrown semipolar material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.