Methods of manufacturing gallium nitride devices
US9978858B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2017 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Feb 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.