Semiconductor device and method for manufacturing the same
US9978864B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2015 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Dec 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate including a first conductive type well region; a gate structure; a lightly-doped drain region and a lightly-doped source region disposed at two opposite sides of the gate structure; a second conductive type first doped region disposed in the lightly-doped drain region, wherein the doping concentration of the second conductive type first doped region is less than the doping concentration of the lightly-doped drain region; a heavily-doped source region disposed in the lightly-doped source region; and a heavily-doped drain region disposed in the second conductive type first doped region. The present disclosure also provides a method for manufacturing the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.