Thermo-compensated silicon photo-multiplier with on-chip thermistor
US9978885B1 · kind B1 · utility
3Cited by
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22Claims
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Key dates
| Filing date | Aug 3, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Aug 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2441
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A silicon photomultiplier (SiPM) device is provided with a SiPM matrix fabricated on a substrate, a bias power supply connected to the SiPM matrix, and a compensation circuit coupled to the bias power supply. The bias power supply provides a bias voltage to the SiPM matrix. The compensation circuit can adjust the bias voltage applied to the SiPM matrix in response to temperature changes at the substrate. The compensation circuit includes a resistor fabricated on the substrate with the SiPM matrix. The resistor can have a resistance that varies in response to temperature changes at the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.