Memristor and method of production thereof
US9978940B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2014 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Oct 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires (105) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material (106) and an insulating material (107).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.